chopper hvigbt module 1200 amperes/1700 volts CM1200E4C-34N 1 06/13 rev. 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex chopper hvigbt modules are designed for use in switching applications. each module consists of one igbt transistor having a reverse- connected super-fast recovery free-wheel diode and an anode- collector connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: traction medium voltage drives high voltage power supplies ordering information: example: select the complete module number you desire from the table below -i.e. CM1200E4C-34N is a 1700v (v ces ), 1200 ampere chopper hvigbt power module. type current rating v ces amperes volts (x 50) cm 1200 34 outline drawing and circuit diagram dimensions inches millimeters a 5.190.02 130.00.5 b 5.510.02 140.00.5 c 4.880.01 124.00.25 d 2.240.01 57.00.25 e 1.570.008 40.00.2 f 0.790.004 20.00.1 g 1.920.008 48.80.2 h 0.420.008 10.650.2 j 0.410.008 10.350.2 k m8 metric m8 l 0.28 dia. 7.0 dia. dimensions inches millimeters m m4 metric m4 n 2.420.012 61.50.3 p 1.50+0.04/-0.0 38.0+1.0/-0.0 q 0.20.008 5.00.2 r 0.65 min. 16.5 min. s 0.30 min. 7.7 min. t 0.710.008 18.00.2 u 1.160.02 29.50.5 v 0.600.008 15.00.2 w 0.210.008 5.20.2 x 1.10+0.04/-0.0 28.0+1.0/-0.0 a d d f e c 4 2 3 e g c 1 b g h n t r 4(c) 2(a) 3(e) e g c p 1(k) q s j v u w x k (4 typ) m (3 typ) l (6 places)
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (t c = 75c) i c 1200 amperes collector current (pulse) *1 i cm 2400 amperes emitter current i e *2 1200 amperes emitter current (pulse) *1 i em *2 2400 amperes maximum power dissipation (t c = 25c, igbt part) *3 p c *3 6500 watts junction temperature t j -40 to +150 c operating temperature t op -40 to +125 c storage temperature t stg -40 to +125 c isolation voltage (rms, sinusoidal, f = 60hz, 1 minute) v iso 4000 volts maximum short circuit pulse width (v cc = 1200v, v ces 1700v, v ge = 15v, t j = 125c) t psc 10 s *1 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t opr(max) rating (125c). *2 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *3 junction temperature (t j ) should not increase beyond maximum junction temperature t j(max) rating (150c).
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 voltst 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 4 ma gate-emitter threshold voltage v ge(th) i c = 120ma, v ce = 10v 6.0 7.0 8.0 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 1200a, v ge = 15v, t j = 25c *4 2.15 2.80 volts i c = 1200a, v ge = 15v, t j = 125c *4 2.40 volts input capacitance c ies 176 nf output capacitance c oes v ce = 10v, f = 100khz, v ge = 0v 9.6 nf reverse transfer capacitance c res 2.8 nf total gate charge q g v cc = 850v, i c = 1200a, v ge = 15v 6.8 c emitter-collector voltage v ec *2 i e = 1200a, v ge = 15v, t j = 25c *4 2.60 3.30 volts i e = 1200a, v ge = 15v, t j = 125c *4 2.30 volts turn-on delay time t d(on) v cc = 850v, i c = 1200a, v ge = 15v, 1.00 s turn-on rise time t r r g(on) = 0.6?, t j = 125c, l s = 150nh, 0.40 s turn-on switching energy e on inductive load 380 mjpulse turn-off delay time t d(off) v cc = 850v, i c = 1200a, v ge = 15v, 1.20 s turn-off fall time t f r g(off) = 3.3?, t j = 125c, l s = 150nh, 0.30 s turn-off switching energy e off inductive load 360 mjpulse reverse recovery time t rr *2 v cc = 850v, i c = 1200a, 1.00 s repetitive reverse current i rr *2 v ge = 15v, r g(on) = 0.6?, 560 amperes reverse recovery charge q rr *2 t j = 125c, l s = 150nh, 300 c reverse recovery energy e rec *2 inductive load 220 mjpulse forward voltage v f *5 i e = 1200a, v ge = 0v, t j = 25c *4 2.60 3.30 volts i e = 1200a, v ge = 0v, t j = 125c *4 2.30 volts reverse recovery time t rr *5 v cc = 850v, i c = 1200a, 1.00 s reverse reverse current i rr *5 v ge = 15v, di/dt = 2900a/s, 560 amperes reverse recovery charge q rr *5 t j = 125c, l s = 150nh, 300 c reverse recovery energy e rec *5 inductive load 220 mjpulse *2 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 pulse width and repetition rate should be such as to cause negligible temperature rise. *5 represent characteristics of the clamp diode.
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 thermal resistance characteristics thermal resistance, junction to case r th(j-c) q igbt part 19.0 k/kw thermal resistance, junction to case r th(j-c) d fwdi part 42.0 k/kw thermal resistance, junction to case r th(j-c) d clamp-di part 42.0 k/kw contact thermal resistance, case to fin r th(c-f) grease = 1w/m ? k 16.0 k/kw mechanical characteristics mounting torque m main terminals, m8 screw 177 in-lb mounting screw, m6 53 in-lb auxiliary terminals, m4 screw 27 in-lb weight m 0.8 kg comparative tracking index cti 600 clearance distance in air d a 19.5 mm creepage distance along surface d s 32.0 mm internal inductance l c-e(int) igbt part 30 nh internal lead resistance r c-e(int) tc = 25c 0.28 m?
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 voltst 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 emitter current, i e , (amperes) free-wheel diode forward characteristics (typical) emitter-collector voltage, v ec , (volts) collector-emitter voltage, v ce(sat) , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 1 3 4 5 6 0 v ge = 20v 10 12 15 8 t j = 125 c 2400 800 1600 400 1200 2000 0 2400 800 1600 400 1200 2000 gate emitter voltage, v ge , (volts) collector current, i c , (amperes ) transfer characteristics (typical) 0 12 4 8 2 6 10 v ce = 20v t j = 25c t j = 125c t j = 25c t j = 125c collector current, i c , (amperes) collector-emitter saturation voltage, v ces , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 4 3 1 2 0 2400 800 1600 400 1200 2000 5 0 4 3 1 2 0 2400 800 1600 400 1200 2000 v ge = 15v t j = 25c t j = 125c
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 volts 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 1 v ge = 0v t j = 25c f = 100khz c ies c oes c res 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge characteristics (typical) 20 0 15 10 5 0 2 4 6 10 8 v cc = 850v i c = 1200a t j = 25c gate resistance, r g , (?) half-bridge switching characteristics (typical) v cc = 850v v ge = 15v r g(on) = 0.6 r g(off) = 3.3 t j = 125c inductive load v cc = 850v v ge = 15v i c = 1200a t j = 125c inductive load collector current, i c , (amperes) switching energys, (mj/pulse) switching energys, (mj/pulse) 1200 600 200 400 800 1000 0 half-bridge switching characteristics (typical) e on e off e rec e on e off e rec 0 1200 400 800 1600 2000 2400 2000 1200 400 800 1600 0 0 6 2 4 8 10 12
CM1200E4C-34N chopper hvigbt module 1200 amperes/1700 voltst 7 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 06/13 rev. 2 emitter current, i e , (amperes) reverse recovery characteristics (typical) 500 0 400 800 1600 2000 1200 300 200 400 100 0 2400 v cc = 850v v ge = 15v r g(on) = 0.6 t j = 125c inductive load reverse recovery charge, q rr , ( c) collector current, i c , (amperes) 10 1 10 2 10 3 10 -1 10 0 10 -2 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 850v v ge = 15v r g(on) = 0.6 r g(off) = 3.3 t j = 125c inductive load t f 10 4 time, (s) transient thermal impedance characteristics (maximum) 1.2 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.4 0 0.2 1.0 0.6 single pulse t c = 25c per unit base = r th(j-c) = 19k/kw (igbt) r th(j-c) = 42k/kw (fwdi) normalized transient thermal impedance, z th(j-c') collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) reverse bias safe operating area (rbsoa) 3000 0 2500 2000 1500 1000 500 0 500 1000 1500 2000 v cc 1200v v ge = 15v t j = 125c r g(off) = 3.3 module chip
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